MAIGA, A. .; BONNAUD, O. .; ROLLAND, L.; TAURIN, M. . Determination of the origin of failure mechanism involved in the degradation of the threshold voltage of a PMOS FET associated to a lateral PNP bipolar transistor in a I2L test cells . Journal des Sciences Pour l’Ingénieur, [S. l.], v. 8, 2008. Disponível em: http://webtest.ucad.sn/JSPI/index.php/jspi/article/view/8. Acesso em: 23 nov. 2024.